2018年5月30日星期三

Infineon expands TRENCHSTOP thin wafer IGBTs

nfineon is in volume production of an expanded portfolio of thin-wafer TRENCHSTOP 5 IGBTs.

The new product family is offering up to 40 A 650V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as D2PAK.

The  TRENCHSTOP 5 IGBT in D2PAK package serves the growing demand for higher power density in power devices for automated surface mounted assembly.

Typical applications requiring highest power density and efficiency are solar inverters, uninterruptible power supply (UPS), battery charging, and energy storage.

The allows higher power density in a smaller chip size e.g. fitting a 40 A 650V IGBT together with a 40 A diode in D2PAK housing.

Compared to competing products in D2PAK, the new family claims to offer a higher rating than any other product on the market, with other co-packed solutions delivering only 75 percent of the power.

The high power density of the new devices enables designers to upgrade existing designs, to develop new platforms with up to 25% higher power output or to reduce the quantity of power devices used in parallel and thus allowing more compact designs.

The co-packed 40 A in D2PAK can be considered as an alternative to D3PAK or TO-247 used for surface mounting.

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